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| (R) BU941ZT/BU941ZTFP BUB941ZT HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON s s s s s VERY RUGGED BIPOLAR TECHNOLOGY BUILT IN CLAMPING ZENER HIGH OPERATING JUNCTION TEMPERATURE WIDE RANGE OF PACKAGES SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX "T4") TO-220 3 1 2 1 2 3 TO-220FP APPLICATIONS s HIGH RUGGEDNESS ELECTRONIC IGNITIONS 1 3 D2PAK TO-263 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CEO V EBO IC I CM IB I BM P t ot T stg Tj Parameter Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current Base Current Base Peak Current BU941Z T Total Dissipation at Tc = 25 oC Storage T emperature Max. O perating Junction Temperature 150 -65 to 175 175 Valu e 350 5 15 30 1 5 BU941Z TF P 55 -65 to 175 175 BUB941ZT 150 -65 to 175 175 W o o Uni t V V A A A A C C January 1999 1/8 BU941ZT / BU941ZTFP / BUB941ZT THERMAL DATA TO -220 D2PAK R t hj-ca se Thermal Resistance Junction-case Max 1 T O-220F P 2.7 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CEO I EBO V CL V CE(sat ) V BE(s at) h F E VF Parameter Collector Cut-off Current (I B = 0) Emitter Cut-off Current (I C = 0) Clamping Voltage Collector-Emitter Saturation Voltage Base-Emitt er Saturation Voltage DC Current Gain Test Cond ition s V CE = 300 V V CE = 300 V V EB = 5 V I C = 100 mA IC = 8 A I C = 10 A IC = 8 A I C = 10 A IC = 5 A I B = 100 mA IB = 250 mA I B = 100 mA IB = 250 mA V CE = 10 V 300 2.5 10 V A 350 Tj = 125 C o Min. Typ . Max. 100 0.5 20 500 1.8 1.8 2.2 2.5 Un it A mA mA V V V V V Diode F orward Voltage I F = 10 A Functional T est (see fig. 1) V CC = 24 V L= 7 mH V CC = 12 V L= 7 mH V clamp = 300V IB = 70 mA IC = 7 A R BE = 47 V BE = 0 ts tf INDUCTIVE LO AD Storage Time Fall Time (see fig. 3) 15 0.5 s s Pulsed: Pulse duration = 300 s, duty cycle 1.5 % Safe Operating Area DC Current Gain 2/8 BU941ZT / BU941ZTFP / BUB941ZT DC Current Gain Collector-emitter Saturation Voltage Collector-emitter Saturation Voltage Base-emitter Saturation Voltage Base-emitter Saturation Voltage Collector-emitter Saturation Voltage 3/8 BU941ZT / BU941ZTFP / BUB941ZT FIGURE 1: Functional Test Circuit FIGURE 2: Functional Test Waveforms FIGURE 3: Switching Time Test Circuit 4/8 BU941ZT / BU941ZTFP / BUB941ZT TO-220 MECHANICAL DATA DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 4.40 1.23 2.40 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 0.551 0.116 0.620 0.260 0.154 0.151 mm TYP. MAX. 4.60 1.32 2.72 MIN. 0.173 0.048 0.094 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 inch TYP. MAX. 0.181 0.051 0.107 P011C 5/8 BU941ZT / BU941ZTFP / BUB941ZT TO-220FP MECHANICAL DATA DIM. MIN. A B D E F F1 F2 G G1 H L2 L3 L4 L6 L7 O 28.6 9.8 15.9 9 3 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 30.6 10.6 16.4 9.3 3.2 1.126 0.385 0.626 0.354 0.118 mm TYP. MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 A B L3 L6 L7 F1 F D G1 E H F2 123 L2 L4 6/8 G BU941ZT / BU941ZTFP / BUB941ZT TO-263 (D2PAK) MECHANICAL DATA mm MIN. A A1 B B2 C C2 D E G L L2 L3 4.4 2.49 0.7 1.14 0.45 1.21 8.95 10 4.88 15 1.27 1.4 TYP. MAX. 4.6 2.69 0.93 1.7 0.6 1.36 9.35 10.4 5.28 15.85 1.4 1.75 MIN. 0.173 0.098 0.027 0.044 0.017 0.047 0.352 0.393 0.192 0.590 0.050 0.055 inch TYP. MAX. 0.181 0.106 0.036 0.067 0.023 0.053 0.368 0.409 0.208 0.624 0.055 0.068 DIM. D A C A2 DETAIL"A" A1 B2 B G C2 DETAIL "A" E L2 L L3 P011P6/E 7/8 BU941ZT / BU941ZTFP / BUB941ZT Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 1998 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com . 8/8 |
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